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| FDS3670 November 2000 FDS3670 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. Features * 6.3 A, 100 V. RDS(ON) = 32 m @ VGS = 10 V RDS(ON) = 35 m @ VGS = 6 V * Low gate charge (57 nC typical) * Fast switching speed * High performance trench technology for extremely low RDS(ON) * High power and current handling capability D D D D 5 6 7 4 3 2 1 SO-8 S S S G 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings 100 20 (Note 1a) Units V V A W 6.3 50 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 50 25 C/W C/W Package Marking and Ordering Information Device Marking FDS3670 Device FDS3670 Reel Size 13'' Tape width 12mm Quantity 2500 units FDS3670 Rev C(W) 2000 Fairchild Semiconductor Corporation FDS3670 Electrical Characteristics Symbol WDSS IAR TA = 25C unless otherwise noted Parameter Single Pulse Drain-Source Avalanche Energy Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VDD = 50 V, ID = 6.3 A Min Typ Max Units 360 6.3 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS ===TJ IDSS IGSSF IGSSR VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25C VDS = 80 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V 100 92 10 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) ===TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A, Referenced to 25C VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 6.3 A,TJ = 125C ID = 5.7 A VGS = 6 V, VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 6.3 A 2 2.5 -7.2 22 39 24 4 V mV/C 32 64 35 m ID(on) gFS 25 31 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 50 V, f = 1.0 MHz V GS = 0 V, 2490 265 80 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = 50 V, VGS = 10 V, ID = 1 A, RGEN = 6 16 10 56 25 26 18 84 40 80 ns ns ns ns nC nC nC VDS = 50 V, VGS = 10 V ID = 25 A, 57 11 15 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 2.1 A (Note 2) 2.1 0.72 1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 50 C/W when mounted on a 1in2 pad of 2 oz copper Scale 1 : 1 on letter size paper b) 105 C/W when mounted on a 0.04 in2 pad of 2 oz copper c) 125 C/W when mounted on a minimum pad. FDS3670 Rev C(W) FDS3670 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% Typical Characteristics 60 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE V GS = 10V 50 I D, DRAIN CURRENT (A) 40 30 4.0V 20 10 3.5V 0 0 1 2 3 4 5 VDS, DRAIN-SOURCE VOLTAGE (V) 5.5V 5.0V 4.5V 2 1.8 1.6 VGS = 4.0V 1.4 4.5V 1.2 1 0.8 0 10 20 30 40 50 60 I D, DIRAIN CURRENT (A) 5.0V 5.5V 7.0V 10V Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.06 2.2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) ID = 7.2A VGS = 10V ID = 3.6A RDS(ON), ON-RESISTANCE ( ) 0.05 TA = 125 oC 0.04 0.03 0.02 0.01 0 3 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) TA = 25oC Figure 3. On-Resistance Variation withTemperature. 60 VDS = 5V 50 I D, DRAIN CURRENT (A) 40 30 125oC 20 25oC 10 0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V) TA = -55oC I S, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 V GS = 0V 10 1 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) TA = 125oC 25oC Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDS3670 Rev C(W) FDS3670 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) I D = 25A 8 VDS = 20V 80V 6 50V 4500 4000 3500 CAPACITANCE (pF) 3000 CISS 2500 2000 1500 1000 500 COSS CRSS f = 1MHz V GS = 0 V 4 2 0 0 10 20 30 40 50 60 Qg, GATE CHARGE (nC) 0 0 20 40 60 80 100 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. 100 RDS(ON) LIMIT I D, DRAIN CURRENT (A) 100s 10 1ms 10ms 100ms 1 V GS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 0.01 0.1 1 10 100 1000 VDS, DRAIN-SOURCE VOLTAGE (V) DC 1s 10s 40 50 Figure 8. Capacitance Characteristics. SINGLE PULSE RJA = 125oC/W TA = 25oC POWER (W) 30 20 0.1 10 0 0.001 0.01 0.1 1 10 100 1000 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSI ENT THER MAL RESISTANCE 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 t 1, TI ME (s e c) 1 10 100 300 D = 0.5 0.2 0.1 0.05 0.02 0.01 S in gle Pulse r(t), NORMALIZED EFFECTIVE R JA (t) = r(t) * R JA R JA = 125C/ W P(pk) t1 t2 TJ - TA = P * RJA (t) D u t y C y c l e, D = t 1 /t 2 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDS3670 Rev C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G |
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